A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator with Resonance Tuning by Carrier Concentration
نویسندگان
چکیده
A complementary metal-oxide-semiconductor (CMOS)-compatible carrier-injection plasmonic micro-ring modulator (CIPMRM) is designed and analyzed theoretically. The CIPMRM has a compacted footprint of 49.3 μm2 (R = 2 μm), bit rate 36.5 Gbps, insertion loss −9.8 dB, static extinction ratio 21.7 energy consumption 4.40 pJ/bit as 2.2 V peak-to-peak voltage applied at 1550 nm. Besides, the method resonance tuning by carrier concentration proposed to compensate for wavelength mismatch between laser, resulting from temperature line width variation CIPMRM. This faster response time greater ability shift resonant compared with thermo-optic tuning. scheme provides route realizing size optoelectronic integration.
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ژورنال
عنوان ژورنال: Photonics
سال: 2022
ISSN: ['2304-6732']
DOI: https://doi.org/10.3390/photonics9050272